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SUPER HIGH-POWER GaAlAs IR EMITTERS
OD-110L
FEATURES
? Ultra high optical output
? Four wire bonds on die corners
? Very narrow optical beam
? Standard 3-lead TO-39 hermetic package
? Chip size: 0.026 x 0.026
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Two Anode
pins must be externally connected together.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P o
Peak Emission Wavelength, λ P
Spectral Bandwidth at 50%, Δλ
Half Intensity Beam Angle, θ
Forward Voltage, V F
Reverse Breakdown Voltage, V R
Rise Time
Fall Time
TEST CONDITIONS
I F = 500mA
I F = 50mA
I F = 50mA
I F = 50mA
I F = 500mA
I R = 10 μ A
I FP = 50mA
I FP = 50mA
MIN
55
5
TYP
110
850
40
7
1.7
30
20
20
MAX
2
UNITS
mW
nm
nm
Deg
Volts
Volts
nsec
nsec
Peak Forward Current (10 μ s, 200Hz)
ABSOLUTEMAXIMUMRATINGSAT25°CCASE
Power Dissipation 1
Continuous Forward Current
2
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
1000mW
500mA
1.5A
5V
260°C
1
Derate per Thermal Derating Curve above 25°C
2 Derate
linearly above 25°C
Thermal Resistance, R THJA
THERMALPARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
1
Thermal Resistance, R THJA 2
-40°C to 100°C
100°C
150°C/W Typical
60°C/W Typical
1
2
Heat transfer minimized by measuring in still air with minimum heat conducting through leads
Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision June 23, 2013
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